vn10lls, vn0605t, vn0610ll, vn2222ll vishay siliconix document number: 70212 s-04279?rev. g, 16-jul-01 www.vishay.com 11-1 n-channel 60-v (d-s) mosfets
part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d min (a) vn10lls 5 @ v gs = 10 v 0.8 to 2.5 0.32 vn0605t 5 @ v gs = 10 v 0.8 to 3.0 0.18 vn0610ll 60 5 @ v gs = 10 v 0.8 to 2.5 0.28 vn2222ll 5 @ v gs = 10 v 0.6 to 2.5 0.23
low on-resistance: 2.5 low threshold: <2.1 v low input capacitance: 22 pf fast switching speed: 7 ns low input and output leakage low offset voltage low-voltage operation easily driven without buffering high-speed circuits low error voltage direct logic-level interface: ttl/cmos solid state relays drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems vn0605t to-92s top view s d g 1 2 3 to-226aa (to-92) top view s d g 1 2 3 g to-236 (sot-23) s d top view 2 3 1 vn10lls vn0610ll vn2222ll vn0610ll ?s? vn0 610ll xxyy front view vn2222ll ?s? vn2 222ll xxyy ?s? = siliconix logo xxyy = date code front view ?s? = siliconix logo xxyy = date code vn10lls ?s? vn 10lls xxyy v2 wll vn0605t v2 = part number code for vn0605t w = week code ll = lot traceability
parameter symbol vn10lls vn0605t vn0610ll vn2222ll unit drain-source voltage v ds 60 60 60 60 gate-source voltage?non-repetitive b v gsm 30 30 30 30 v gate-source voltage?continuous v gs 20 20 20 20 continuous drain current t a = 25 c 0.32 0.18 0.28 0.23 continuous drain current (t j = 150 c) t a = 100 c i d 0.2 0.11 0.17 0.14 a pulsed drain current a i dm 1.4 0.72 1.3 1.0 t a = 25 c 0.9 0.36 0.8 0.8 power dissipation t a = 100 c p d 0.4 0.14 0.32 0.32 w thermal resistance, junction-to-ambient r thja 139 350 156 156 c/w operating junction and storage temperature range t j , t stg ?55 to 150 c notes a. pulse width limited by maximum junction temperature. b. t p 50 s.
vn10lls, vn0605t, vn0610ll, vn2222ll vishay siliconix www.vishay.com 11-2 document number: 70212 s-04279 ? rev. g, 16-jul-01
limits vn10lls vn0610ll vn0605t vn2222ll parameter symbol test conditions typ a min max min max min max unit static drain-source v gs = 0 v, i d = 100 a 70 60 60 drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 70 60 v gate-threshold voltage v gs(th) v ds = v gs , i d = 1 ma 2.1 0.8 2.5 0.8 3.0 0.6 2.5 v ds = 0 v, v gs = 20 v 100 100 gate-body leakage i gss t j =125 c 500 na v ds = 0 v, v gs = 30 v 100 v ds = 50 v, v gs = 0 v 10 1.0 zero gate-voltage t j = 125 c 500 500 zero gate-voltage drain current i dss v ds = 48 v, v gs = 0 v 10 a t j = 125 c 500 on-state drain current b i d(on) v ds = 10 v, v gs = 10 v 1000 750 500 750 ma v gs = 4.5 v, i d = 50 ma 4.5 7.5 drain-source v gs = 5 v, i d = 0.2 a 4.5 7.5 7.5 drain-source on-resistance b r ds(on) v gs = 10 v, i d = 0.5 a 2.4 5 5 7.5 t j = 125 c 4.4 9 10 13.5 forward v ds = 10 v, i d = 0.5 a 230 100 100 forward transconductance b g fs v ds = 10 v, i d = 0.2 a 180 80 ms common source output conductance b g os v ds = 5 v, i d = 50 ma 500 s dynamic input capacitance c iss 22 60 60 60 output capacitance c oss v ds =25 v, v gs = 0 v 11 25 25 25 pf reverse transfer capacitance c rss f = 1 mhz 2 5 5 5 pf switching c turn-on time t on v dd = 15 v, r l = 23 , i d 0.6 a 7 10 10 turn-off time t off v dd = 15 v, r l = 23 , i d 0.6 a v gen = 10 v, r g = 25 7 10 10 turn-on time t on v dd = 30 v, r l = 150 , i d 0.2 a 7 20 ns turn-off time t off v dd = 30 v, r l = 150 , i d 0.2 a v gen = 10 v, r g = 25 11 20 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. vnbf06 b. pulse test: pw 300 s duty cycle 3%. c. switching time is essentially independent of operating temperature.
vn10lls, vn0605t, vn0610ll, vn2222ll vishay siliconix document number: 70212 s-04279 ? rev. g, 16-jul-01 www.vishay.com 11-3 0.0 0.2 0.4 0.6 0.8 1.0 0123456 0.0 0.2 0.4 0.6 0.8 1.0 0123456 output characteristics transfer characteristics v ds ? drain-to-source voltage (v) v gs = 10, 9, 8, 7 v 6.5 v v gs ? gate-to-source voltage (v) t j = ? 55 c 125 c 6 v 5.5 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 2, 1 v 25 c 0 4 8 12 16 20 0 400 800 1200 1600 2000 2400 0.0 0.5 1.0 1.5 2.0 ? 55 ? 30 ? 5 20 45 70 95 120 145 0 1 2 3 4 5 6 7 0.0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 60 0 5 10 15 20 25 30 gate charge on-resistance vs. drain current q g ? total gate charge (pc) v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 30 v i d = 0.5 a i d ? drain current (a) capacitance on-resistance vs. junction temperature v gs = 10 v, r ds @ 0.5 a t j ? junction temperature ( c) r ds @ 10 v = v gs r ds @ 5 v = v gs t j = 25 c v gs = 5 v, r ds @ 0.05 a v gs = 0 v f = 1 mhz i d ? drain current (a) i d ? drain current (a) c ? capacitance (pf) r ds(on) ? on-resistance ( ? ) v gs ? gate-to-source voltage (v) r ds(on) ? on-resistance ( ? ) ( normalized)
vn10lls, vn0605t, vn0610ll, vn2222ll vishay siliconix www.vishay.com 11-4 document number: 70212 s-04279 ? rev. g, 16-jul-01 0.001 0.010 0.100 1.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 source-drain diode forward voltage on-resistance vs. gate-to-source voltage v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) 0 1 2 3 4 5 6 0 2 4 6 8 101214161820 500 ma i d = 50 ma t j = 125 c t j = 25 c threshold voltage t j ? junction temperature ( c) ? 0.75 ? 0.50 ? 0.25 ? 0.00 0.25 0.50 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 0.1 1 100 10 1 k normalized effective transient thermal impedance, junction-to-ambient (to-226aa) normalized effective transient thermal impedance t 1 ? square wave pulse duration (sec) 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 i s ? source current (a) r ds(on) ? on-resistance ( ? ) v gs(th) ? variance (v)
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